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FSPJ264R, FSPJ264F
TM
Data Sheet
July 2000
File Number
4894
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil Star*PowerTM Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Intersil FS families have always featured.
TM
Features
* 43A, 250V, rDS(ON) = 0.047 * UIS Rated * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS * Photo Current - 21nA Per-RAD (Si)/s Typically * Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2
The Intersil portfolio of Star*Power FETs includes a family of devices in various voltage, current and package styles. The Star*Power family consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and rDS(ON) performance while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either TXV or Space equivalent of MIL-PRF-19500. Formerly available as type TA45217W.
Symbol
D
G
S
Packaging
TO-254AA
G
S D
Ordering Information
RAD LEVEL 10K 100K 100K 300K 300K SCREENING LEVEL PART NUMBER/BRAND Engineering Samples FSPJ264D1 TXV Space TXV Space FSPJ264R3 FSPJ264R4 FSPJ264F3 FSPJ264F4 CAUTION: Beryllia Warning per MIL-PRF-19500 refer to package specifications.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. Star*PowerTM is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright (c) Intersil Corporation 2000
FSPJ264R, FSPJ264F
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified FSPJ264R, FSPJ264F Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100H (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) 250 250 43 27 160 30 192 77 1.54 85 43 160 -55 to 150 300 9.3(Typical) UNITS V V A A A V W W W/ oC A A A oC oC g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 250 2.0 1.0 VGS = 0V to 12V VDD = 125V, ID = 43A VGS = 0V to 20V VGS = 0V to 2V ID = 43A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.041 115 35 35 195 12 7 6100 875 35 MAX 5.5 4.5 25 250 100 200 2.15 0.047 0.092 35 70 70 15 140 45 45 0.65 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg(12) Qgs Qgd Qg(20) Qg(TH) V(PLATEAU) CISS COSS CRSS RJC
VDS = 200V, VGS = 0V VGS = 30V VGS = 12V, ID = 43A ID = 27A, VGS = 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source On Resistance
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge Source Gate Charge Drain Gate Charge at 20V Threshold Gate Charge Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case
VDD = 125V, ID = 43A, RL = 2.9, VGS = 12V, RGS = 2.35
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FSPJ264R, FSPJ264F
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL VSD trr QRR TEST CONDITIONS ISD = 43A ISD = 43A, dISD/dt = 100A/s MIN TYP 6.8 MAX 1.2 590 UNITS V ns C
Electrical Specifications up to 300K RAD
PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300s Max. 2. Absolute value.
TC = 25oC, Unless Otherwise Specified TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = 30V, VDS = 0V VGS = 0, VDS = 200V VGS = 12V, ID = 43A VGS = 12V, ID = 27A MIN MAX 100K RAD 250 2.0 4.5 100 25 2.15 0.047 MIN MAX 300K RAD 250 1.5 4.5 100 50 2.62 0.056 UNITS V V nA A V
(Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3)
SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR)
Note 4 ION SPECIES Br Br I I Au Au ENVIRONMENT (NOTE 5) TYPICAL LET TYPICAL (MeV/mg/cm) RANGE () 37 36 37 36 60 32 60 32 82 28 82 28 APPLIED VGS BIAS (V) -10 -15 -2 -8 0 -5 (NOTE 6) MAXIMUM VDS BIAS (V) 250 200 200 150 150 100
TEST Single Event Effects Safe Operating Area
SYMBOL SEESOA
NOTES: 4. Testing conducted at Brookhaven National Labs. 5. Fluence = 1E5 ions/cm2 (Typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36 LET = 60MeV/mg/cm2, RANGE = 32 LET = 82MeV/mg/cm2, RANGE = 28 280 240 200 VDS (V) VDS (V) 160 120 80 40 0 0 -4 -8 VGS (V) -12 -16 -20 FLUENCE = 1E5 IONS/cm2 (TYPICAL) TEMP = 25oC 280 240 200 160 120 80 LET = 82 GOLD 40 0 0 -5 -10 -15 VGS (V) -20 -25 -30 LET = 60 IODINE LET = 37 BROMINE
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
FSPJ264R, FSPJ264F Performance Curves
1E-3 LIMITING INDUCTANCE (HENRY) 50 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 10 ID , DRAIN (A)
Unless Otherwise Specified (Continued)
40
30
20
1E-7 10
30
100 DRAIN SUPPLY (V)
300
1000
0 -50
0
50
100
150
TC , CASE TEMPERATURE (oC)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE
500 TC = 25oC ID , DRAIN CURRENT (A) 100 12V QG
10 100s QGS 1ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms VG QGD
0.1 1 10 100 1000 CHARGE VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5 PULSE DURATION = 250ms, VGS = 12V, ID = 27A 2.0 NORMALIZED rDS(ON) ID, DRAIN TO SOURCE CURRENT (A)
200 DESCENDING ORDER VGS = 14V VGS = 12V VGS = 10V VGS = 8V VGS = 6V VGS = 6 VOLTS
160
1.5
120
1.0
80
0.5
40
0.0 -80
0 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
0
2
4
6
8
10
12
14
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
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FSPJ264R, FSPJ264F Performance Curves
NORMALIZED THERMAL RESPONSE (ZqJC) 101
Unless Otherwise Specified (Continued)
100 0.5 10-1 0.2 0.1 0.05 0.02 0.01
SINGLE PULSE PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 100 t1
10-2
10-3
t2 101
10-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
300 IAS , AVALANCHE CURRENT (A)
100
STARTING TJ = 25oC
STARTING TJ = 150oC 10 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.001 0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L + CURRENT I TRANSFORMER AS BVDSS tP IAS 50 + VDD VDS VDD
-
VARY tP TO OBTAIN REQUIRED PEAK IAS VGS 20V
DUT 50V-150V 50 tAV
0V
tP
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
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FSPJ264R, FSPJ264F Test Circuits and Waveforms
(Continued)
VDD tON td(ON) RL VDS VGS = 12V DUT 0V RGS VGS 10% 50% PULSE WIDTH 50% 10% 10% tr VDS 90% tOFF td(OFF) tf 90%
90%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = 30V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX 20 (Note 7) 25 (Note 7) 20% (Note 8) 20% (Note 8) UNITS nA A V
Screening Information
TEST Unclamped Inductive Switching Thermal Response Gate Stress Pind Pre Burn-In Tests (Note 9) Steady State Gate Bias (Gate Stress) Interim Electrical Tests (Note 9) Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. JANTXV EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 85A VGS = 45V, t = 250s Optional MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-PRF-19500, Group A, Subgroup 2 JANS EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 85A
tH = 100ms; VH = 25V; IH = 4A; LIMIT = 100mV tH = 100ms; VH = 25V; IH = 4A; LIMIT = 100mV VGS = 45V, t = 250s Required MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-PRF-19500, Group A, Subgroups 2 and 3
Additional Tests
PARAMETER Safe Operating Area Thermal Impedance SYMBOL SOA VSD TEST CONDITIONS VDS = 200V, t = 10ms tH = 500ms; VH =25V; IH = 4A MAX 0.80 200 UNITS A mV
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FSPJ264R, FSPJ264F Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE
A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
Class S - Equivalents
1. RAD HARD "S" EQUIVALENT - STANDARD DATA PACKAGE
A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE
A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A E. Group B - Attributes Data Sheet - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Pre and Post RAD Read and Record Data
2. RAD HARD MAX. "S" EQUIVALENT - OPTIONAL DATA PACKAGE
A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Pre and Post Radiation Data
F. Group C
G. Group D
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FSPJ264R, FSPJ264F TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
A E OP A1
INCHES SYMBOL A MIN 0.249 0.040 0.035 0.790 0.535 MAX 0.260 0.050 0.045 0.800 0.545
MILLIMETERS MIN 6.33 1.02 0.89 20.07 13.59 MAX 6.60 1.27 1.14 20.32 13.84 NOTES 2, 3 4 4 4 -
Q H1
A1 Ob D
D
E e e1 H1 J1
0.065 R MAX. TYP.
0.150 TYP 0.300 BSC 0.245 0.140 0.520 0.139 0.110 0.265 0.160 0.560 0.149 0.130
3.81 TYP 7.62 BSC 6.23 3.56 13.21 3.54 2.80 6.73 4.06 14.22 3.78 3.30
L OP Q
L
Ob
1
2
3 J1
e e1
NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC outline TO-254AA dated 11-86. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its' compounds.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil Ltd. 8F-2, 96, Sec. 1, Chien-kuo North, Taipei, Taiwan 104 Republic of China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369
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